BCR3AS Datasheet, PDF (2/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
Repetitive peak off-state current
On-state voltage
Tj=125°C, VDRM applied
Tc=25°C, ITM=4.5A, Instantaneous measurement
Gate trigger voltage ^V2
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
#
Gate trigger current ^V2
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
#
Gate non-trigger voltage
Thermal resistance
Tj=125°C, VD=1/2VDRM
Junction to case ^V4
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
V2. High sensitivity (IGT≤10mA) is also available.
V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V4. Case temperature is measured on the T2 terminal.
Voltage
class
VDRM
(V)
(dv/dt) c
Min.
Unit
Test conditions
8
400
12
600
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutating current
5
V/µs
(di/dt)c=–1.5A/ms
3. Peak off-state voltage
VD=400V
Limits
Unit
Min. Typ. Max.
—
—
2.0
mA
—
—
1.7
V
—
—
1.5
V
—
—
1.5
V
—
—
1.5
V
—
—
15 ^V2 mA
—
—
15 ^V2 mA
—
—
15 ^V2 mA
0.2
—
—
V
—
—
3.8
°C/ W
V3
—
—
V/µs
Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
10²
7 TC = 25°C
5
3
2
10¹
7
5
3
2
10⁰
7
5
3
2
10^–1
0
1
2
3
4
5
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
40
35
30
25
20
15
10
5
0
10⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999