BCR3AS Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

BCR3AS
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
Dimensions
in mm
TYPE
NAME
6.5
5.0±0.2
4
∗
VOLTAGE
CLASS
0.5±0.1
• IT (RMS) ........................................................................ 3A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ......................... 15mA (10mA) ^V2
0.9 MAX
1.0
2.3 2.3
0.5±0.2
0.8
∗ Measurement point of
case temperature
123
24
1 T1 TERMINAL
2 T2 TERMINAL
3 ^{3 GATE TERMINAL}
1
4 T2 TERMINAL
MP-3
APPLICATION
Hybrid IC, solid state relay, switching mode power supply, light dimmer,
electric fan, electric blankets,
control of household equipment such as washing machine,
other general purpose control applications
MAXIMUM RATINGS
Symbol
Parameter
Voltage class
Unit
8
12
VDRM
Repetitive peak off-state voltage ^V1
400
600
V
VDSM
Non-repetitive peak off-state voltage ^V1
500
720
V
Symbol
IT (RMS)
ITSM
I^2t
Parameter
RMS on-state current
Surge on-state current
I^2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=108°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
Unit
3
A
30
A
3.7
A²s
3
W
0.3
W
6
V
0.3
A
–40 ~ +125
°C
–40 ~ +125
°C
0.26
g
Feb.1999