BCR30AM Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
BCR30AM
Triac
30 Ampere/400-600 Volts
Absolute Maximum Ratings, T_a = 25 °C unless otherwise specified
Ratings
Symbol
On-state Current, T_c = 75°C
Repetitive Peak Off-state Voltage (Gate Open)
Non-repetitive Peak Off-state Voltage (Gate Open)
Non-repetitive Peak On-state Voltage, One Cycle (60 Hz)
I²t for Fusing, t = 8.3 msec
I_T(RMS)
V_DRM
V_DSM
I_TSM
I²t
Peak Gate Power Dissipation, 20 ␮sec
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Storage Temperature
Operating Temperature
Weight
P_GM
P_G(avg)
I_GM
V_GM
T_stg
T_j
–
BCR30AM-8
30
400
500
300
378
5
0.5
2
10
-40 to 125
-40 to 125
4.8
BCR30AM-12
30
600
720
300
378
5
0.5
2
10
-40 to 125
-40 to 125
4.8
Units
Amperes
Volts
Volts
Amperes
A²sec
Watts
Watts
Amperes
Volts
°C
°C
Grams
Electrical and Thermal Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions (Trigger Mode)
V_D
R_L
R_G
T_j
Gate Parameters
DC Gate Trigger Current
MT2+ Gate+
MT2+ Gate–
MT2– Gate–
DC Gate Trigger Voltage
I_FGT I
I_RGT I
I_RGT III
6V
6⍀
330⍀ 25°C
6V
6⍀
330⍀ 25°C
6V
6⍀
330⍀ 25°C
MT2+ Gate+
MT2+ Gate–
MT2– Gate–
DC Gate Non-trigger Voltage
V_FGT I
V_RGT I
V_RGT III
6V
6⍀
330⍀ 25°C
6V
6⍀
330⍀ 25°C
6V
6⍀
330⍀ 25°C
All
V_GD
1/2 V_DRM –
–
125°C
BCR30GM
Min.
Typ.
–
–
–
–
–
–
–
–
–
–
–
–
0.2
–
Max. Units
50
mA
50
mA
50
mA
2.5 Volts
2.5 Volts
2.5 Volts
–
Volts
Characteristics
Thermal Resistance, Junction-to-case
Voltage – Blocking State
Repetitive Off-state Current
Current – Conducting State
Peak On-state Voltage
Critical Rate-of-Rise of Commutating
Off-state Voltage (Commutating dv/dt)
v (Switching)
Symbol
R_th(c-f)
I_DRM
V_TM
(dv/dt)_c
Test Conditions
–
Gate Open Circuited,
V_D = V_DRM, T_j = 125°C
T_c = 25°C,
I_TM = 45A
–
Min.
Typ. Max. Units
–
–
1.2 °C/W
–
–
3
mA
–
–
1.6 Volts
–
–
–
V/␮s
T-88