LP28009 Datasheet, PDF (7/12 Pages) Lowpower Semiconductor inc – Internal Integrate P-MOSFETs

Preliminary Datasheet
LP28009
Parameter
Supply Input
ACIN UVP Rising Threshold Voltage
ACIN UVP Hysteresis
ACIN Standby Current
ACIN Shutdown Current
ACIN UVP Current
BATT Sleep Leakage Current
Voltage Regulation
BATT Regulation Voltage
Regulation Voltage Accuracy
ACIN MOSFET
Current Regulation
ISETA Set Voltage
(Fast Charge Phase)
Full Charge Setting Range
ACIN Charge Current Accuracy
Symbol
Test Conditions
VUV_HIGH
VUV_LOW
ISTBY
ISHDN
IUVP
ISLEEP
VBATT=4.5V
VEN=HIGH
VACIN=4V,
VUSB=4V,
VBATT=3V
VACIN=4V,
VUSB=4V,
VBATT=4.5V
VREG
IBATT=60mA
RDS(ON)_ACIN IBATT=500mA
VISETA
ICHG_AC
ICHG_AC
VBATT=3.5V
VBATT=3.8V
RISET=1.5KΩ
Min Typ Max Units
4.4 4.5
V
50 80 120 mV
300 500 μA
50 100 μA
150 250 μA
2
5 μA
4.158 4.2 4.242 V
-1
+1 %
600
mΩ
2.45 2.5 2.55 V
100 --
1200 mA
-- 125 --
℃
LP28009 – 02
May.-2013
Email: [e-mail]
www.lowpowersemi.com
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