AR709 Datasheet, PDF (4/4 Pages) Power Semiconductors – RECTIFIER DIODE

AR709 RECTIFIER DIODE
FINAL SPECIFICATION set 02 - ISSUE : 03
FORWARD CHARACTERISTIC
Tj = 190 °C
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
SURGE CHARACTERISTIC
Tj = 190 °C
30000
25000
20000
15000
10000
5000
0
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage [V]
90
80
70
60
50
40
30
20
10
0
1
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0.001 0.01
0.1
1
t[s]
10
100
10
100
n° cycles
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO SPA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
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