AR709 Datasheet, PDF (1/4 Pages) Power Semiconductors – RECTIFIER DIODE

POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
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RECTIFIER DIODE
FINAL SPECIFICATION
set 02 - ISSUE : 03
Symbol Characteristic
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
I RRM
Repetitive peak reverse current
AR709
Repetitive voltage up to
Mean forward current
Surge current
Conditions
V=VRRM
1000 V
8710 A
85 kA
Tj
[°C]
Value
Unit
190 1000
V
190 1100
V
190 200
mA
CONDUCTING
I F (AV)
Mean forward current
I F (AV)
I FSM
I² t
V FM
V F(TO)
rF
Mean forward current
Surge forward current
I² t
Forward voltage
Threshold voltage
Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled
180° sin ,50 Hz, Tc=85°C, double side cooled
Sine wave, 10 ms
without reverse voltage
Forward current =
6000 A
8710
A
8420
A
190
85
kA
36125 x 1E3 A²s
25 1.14
V
190 0.70
V
190 0.033
mohm
SWITCHING
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
µs
190
µC
A
MOUNTING
R th(j-h)
Thermal impedance, DC
R th(c-h)
Thermal impedance
Tj
Operating junction temperature
F
Mounting force
Mass
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
ORDERING INFORMATION : AR709 S 10
standard specification
VRRM/100
11
°C/kW
2
°C/kW
-30 / 190
°C
46.0 / 54.0 kN
1700
g