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AR670 Datasheet, PDF (4/4 Pages) Power Semiconductors – RECTIFIER DIODE
AR670 RECTIFIER DIODE
FINAL SPECIFICATION nov 02 - ISSUE : 03
FORWARD CHARACTERISTIC
Tj = 150 °C
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
SURGE CHARACTERISTIC
Tj = 150 °C
7000
6000
5000
4000
3000
2000
1000
0
0.6
1.1
1.6
2.1
2.6
Forward Voltage [V]
25
20
15
10
5
0
1
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
25.0
20.0
15.0
10.0
5.0
0.0
0.001 0.01
0.1
1
t[s]
10
100
10
100
n° cycles
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO SpA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
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