AR670 Datasheet, PDF (1/4 Pages) Power Semiconductors – RECTIFIER DIODE

POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
RECTIFIER DIODE
FINAL SPECIFICATION
nov 02 - ISSUE : 03
Symbol Characteristic
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
I RRM
Repetitive peak reverse current
AR670
Repetitive voltage up to
Mean forward current
Surge current
Conditions
V=VRRM
4400 V
2280 A
22 kA
Tj
[°C]
Value
Unit
150 4400
V
150 4500
V
150 200
mA
CONDUCTING
I F (AV)
Mean forward current
I F (AV)
I FSM
I² t
V FM
V F(TO)
rF
Mean forward current
Surge forward current
I² t
Forward voltage
Threshold voltage
Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled
180° sin ,50 Hz, Tc=85°C, double side cooled
Sine wave, 10 ms
without reverse voltage
Forward current =
3000 A
2280
A
2220
A
150
22
kA
2420 x 1E3 A²s
25 1.50
V
150 0.80
V
150 0.210
mohm
SWITCHING
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
µs
150
µC
A
MOUNTING
R th(j-h)
Thermal impedance, DC
R th(c-h)
Thermal impedance
Tj
Operating junction temperature
F
Mounting force
Mass
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
ORDERING INFORMATION : AR670 S 44
standard specification
VRRM/100
21
°C/kW
6
°C/kW
-30 / 150
°C
22.0 / 24.5 kN
500
g