ARF435 Datasheet, PDF (3/4 Pages) Power Semiconductors – FAST RECOVERY DIODE

ARF435 FAST RECOVERY DIODE
FINAL SPECIFICATION ott 97 - ISSUE : 07
SWITCHING CHARACTERISTICS
FORWARD RECOVERY VOLTAGE
30
25
Tj = 150 °C
20
Tj = 25 °C
15
10
VFR
5
0
0
200 400 600 800 1000 1200
di/dt [A/µs]
ANSALDO
IF
VF
REVERSE RECOVERY CHARGE
Tj = 150 °C
900
800
700
600
500
400
300
200
100
0
0
1000 A
500 A
250 A
100
200
300
400
di/dt [A/µs]
REVERSE RECOVERY CURRENT
Tj = 150 °C
600
550
500
450
400
350
300
250
200
150
100
50
0
0
1000 A
500 A
250 A
100
200
300
400
di/dt [A/µs]
ta = Irr / (di/dt) tb = trr - ta
IF
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 )
d i/d t
ta tb
Irr
Vr