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ARF435 Datasheet, PDF (1/4 Pages) Power Semiconductors – FAST RECOVERY DIODE
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
FAST RECOVERY DIODE
FINAL SPECIFICATION
ott 97 - ISSUE : 07
ARF435
Repetitive voltage up to
Mean forward current
Surge current
Symbol Characteristic
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
I RRM
Repetitive peak reverse current
Conditions
V=VRRM
CONDUCTING
I F (AV)
Mean forward current
180° sin ,50 Hz, Th=55°C, double side cooled
I F (AV)
I FSM
I² t
V FM
V F(TO)
rF
Mean forward current
Surge forward current
I² t
Forward voltage
Threshold voltage
Forward slope resistance
180° square,50 Hz,Th=55°C,double side cooled
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
Forward current =1800 A
SWITCHING
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
s
Softness (s-factor), min
V FR
Peak forward recovery
IF=
di/dt=
VR =
500 A
80 A/µs
100 V
di/dt= 400 A/µs
MOUNTING
R th(j-h)
Thermal impedance
Tj
Operating junction temperature
F
Mounting force
Mass
Junction to heatsink, double side cooled
ORDERING INFORMATION : ARF435 S 26
standard specification
VRRM/100
2600 V
955 A
12 kA
Tj
[°C] Value Unit
150 2600
V
150 2700
V
150
50
mA
955
A
970
A
150
12
kA
720 x1E3 A²s
25
2.3
V
150 1.10
V
150 0.675
mohm
4
µs
150 360
µC
200
A
0.4
150
15
V
37
°C/kW
-30 / 150 °C
11.8 / 13.2 kN
300
g