TIP36 Datasheet, PDF (3/6 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

TIP36, TIP36A, TIP36B, TIP36C
PNP SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
1000
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS636AA
V_CE = -4 V
T_C = 25°C
t_p = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCS636AB
-10
100
-1·0
10
1
-0·1
-1
-10
I_C - Collector Current - A
Figure 1.
-100
-0·1
I_C = -300 mA
I_C = -1 A
I_C = -3 A
-0·01
-0·001 -0·01
-0·1
-1·0
I_B - Base Current - A
Figure 2.
I_C = -25 A
I_C = -20 A
I_C = -15 A
I_C = -10 A
-10
-100
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
-1·8
V_CE = -4 V
TCS636AC
T_C = 25°C
-1·6
-1·4
-1·2
-1·0
-0·8
-0·6
-0·1
-1·0
-10
-100
I_C - Collector Current - A
Figure 3.
PRODUCT INFORMATION
3