TIP36 Datasheet, PDF (2/6 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

TIP36, TIP36A, TIP36B, TIP36C
PNP SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
TIP36
-40
Collector-emitter
V_{(BR)CEO breakdown voltage}
I_C = -30 mA
(see Note 5)
I_B = 0
TIP36A
TIP36B
TIP36C
-60
-80
-100
V_CE = -80 V
V_BE = 0
TIP36
-0.7
Collector-emitter
I_{CES cut-off current}
V_CE = -100 V
V_CE = -120 V
V_BE = 0
V_BE = 0
TIP36A
TIP36B
-0.7
-0.7
V_CE = -140 V
V_BE = 0
TIP36C
-0.7
I_CEO
Collector cut-off
current
V_CE = -30 V
V_CE = -60 V
I_B = 0
I_B = 0
TIP36/36A
TIP36B/36C
-1
-1
Emitter cut-off
I_{EBO current}
V_EB = -5 V
I_C = 0
-1
Forward current
h_FE
transfer ratio
V_CE = -4 V
V_CE = -4 V
I_C = -1.5 A
I_C = -15 A
25
(see Notes 5 and 6)
10
50
Collector-emitter
V_{CE(sat) saturation voltage}
I_B = -1.5 A
I_B = -5 A
I_C = -15 A
I_C = -25 A
(see Notes 5 and 6)
-1.8
-4
Base-emitter
V_BE
voltage
V_CE = -4 V
V_CE = -4 V
I_C = -15 A
I_C = -25 A
(see Notes 5 and 6)
-2
-4
Small signal forward
h_fe
current transfer ratio ^{VCE = -10 V}
I_C = -1 A
f = 1 kHz
25
|h_fe|
Small signal forward
current transfer ratio
V_CE = -10 V
I_C = -1 A
f = 1 MHz
3
NOTES: 5. These parameters must be measured using pulse techniques, t_p = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
R_θJC
R_θJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1 °C/W
35.7 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS ^†
t_on
Turn-on time
t_off
Turn-off time
I_C = -15 A
V_BE(off) = 4.15 V
I_B(on) = -1.5 A
R_L = 2 Ω
I_B(off) = 1.5 A
t_p = 20 µs, dc ≤ 2%
† _{Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.}
MIN TYP MAX UNIT
1.1
µs
0.8
µs
PRODUCT INFORMATION
2