TIP30 Datasheet, PDF (3/6 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

TIP30, TIP30A,TIP30B, TIP30C
PNP SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
1000
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS632AD
V_CE = -4 V
T_C = 25°C
t_p = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCS632AE
-10
I_C = -100 mA
I_C = -300 mA
I_C = -1 A
100
-1·0
10
-0·1
1
-0·001
-0·01
-0·1
I_C - Collector Current - A
Figure 1.
-0·01
-1·0
-0·1
-1·0
-10
-100
I_B - Base Current - mA
Figure 2.
-1000
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
-1·0
TCS632AF
V_CE = -4 V
T_C = 25°C
-0·9
-0·8
-0·7
-0·6
-0·5
-0·01
-0·1
-1·0
I_C - Collector Current - A
Figure 3.
PRODUCT INFORMATION
3