TIP30 Datasheet, PDF (2/6 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

TIP30, TIP30A,TIP30B, TIP30C
PNP SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
TIP30
-40
Collector-emitter
V_{(BR)CEO breakdown voltage}
I_C = -30 mA
(see Note 5)
I_B = 0
TIP30A
TIP30B
TIP30C
-60
-80
-100
V_CE = -80 V
V_BE = 0
TIP30
-0.2
Collector-emitter
I_{CES cut-off current}
V_CE = -100 V
V_CE = -120 V
V_BE = 0
V_BE = 0
TIP30A
TIP30B
-0.2
-0.2
V_CE = -140 V
V_BE = 0
TIP30C
-0.2
I_CEO
Collector cut-off
current
V_CE = -30 V
V_CE = -60 V
I_B = 0
I_B = 0
TIP30/30A
TIP30B/30C
-0.3
-0.3
Emitter cut-off
I_{EBO current}
V_EB = -5 V
I_C = 0
-1
Forward current
h_FE
transfer ratio
V_CE = -4 V
V_CE = -4 V
I_C = -0.2 A
I_C = -1 A
40
(see Notes 5 and 6)
15
75
Collector-emitter
V_{CE(sat) saturation voltage}
I_B = -125 mA
I_C = -1 A
(see Notes 5 and 6)
-0.7
Base-emitter
V_BE
voltage
V_CE = -4 V
I_C = -1 A
(see Notes 5 and 6)
-1.3
Small signal forward
h_fe
current transfer ratio ^{VCE = -10 V}
I_C = -0.2 A
f = 1 kHz
20
|h_fe|
Small signal forward
current transfer ratio
V_CE = -10 V
I_C = -0.2 A
f = 1 MHz
3
NOTES: 5. These parameters must be measured using pulse techniques, t_p = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
R_θJC
R_θJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
4.17 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS ^†
t_on
Turn-on time
t_off
Turn-off time
I_C = -1 A
V_BE(off) = 4.3 V
I_B(on) = -0.1 A
R_L = 30 Ω
I_B(off) = 0.1 A
t_p = 20 µs, dc ≤ 2%
† _{Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.}
MIN TYP MAX UNIT
0.3
µs
1
µs
PRODUCT INFORMATION
2