TIPL791 Datasheet, PDF (2/7 Pages) Power Innovations Ltd – NPN SILICON POWER TRANSISTORS

TIPL791, TIPL791A
NPN SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
TIPL791
400
V_{CEO(sus) sustaining voltage}
I_C = 100 mA L = 25 mH
(see Note 2)
TIPL791A
450
V_CE = 850 V V_BE = 0
TIPL791
5
Collector-emitter
I_{CES cut-off current}
V_CE = 1000 V
V_CE = 850 V
V_BE = 0
V_BE = 0
T_C = 100°C
TIPL791A
TIPL791
5
200
V_CE = 1000 V V_BE = 0
T_C = 100°C
TIPL791A
200
I_CEO
Collector cut-off
current
V_CE = 400 V
V_CE = 450 V
I_B = 0
I_B = 0
TIPL791
5
TIPL791A
5
Emitter cut-off
I_EBO
current
V_EB = 10 V I_C = 0
1
Forward current
h_FE
transfer ratio
V_CE = 5 V I_C = 0.5 A
(see Notes 3 and 4)
20
60
Collector-emitter
V_{CE(sat) saturation voltage}
Base-emitter
V_{BE(sat) saturation voltage}
Current gain
f_t
bandwidth product
I_B = 0.2 A
I_B = 0.5 A
I_B =
1A
I_B =
1A
I_B = 0.2 A
I_B = 0.5 A
I_B =
1A
I_B =
1A
V_CE = 10 V
I_C = 1 A
I_C = 2.5 A
I_C = 4 A
I_C = 4 A
I_C = 1 A
I_C = 2.5 A
I_C = 4 A
I_C = 4 A
I_C = 0.5 A
(see Notes 3 and 4)
T_C = 100°C
(see Notes 3 and 4)
T_C = 100°C
f = 1 MHz
0.5
1.0
2.5
5.0
1.0
1.2
1.4
1.3
12
C_ob Output capacitance V_CB = 20 V I_E = 0
f = 0.1 MHz
110
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, t_p = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
µA
µA
mA
V
V
MHz
pF
thermal characteristics
R_θJC
PARAMETER
Junction to case thermal resistance
MIN TYP MAX UNIT
1.66 °C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS ^†
MIN
t_sv
Voltage storage time
t_rv
Voltage rise time
t_fi
Current fall time
t_ti
Current tail time
I_C = 4 A
V_BE(off) = -5 V
t_xo
Cross over time
t_sv
Voltage storage time
t_rv
Voltage rise time
t_fi
Current fall time
t_ti
Current tail time
I_C = 4 A
V_BE(off) = -5 V
t_xo
Cross over time
I_B(on) = 0.8A
I_B(on) = 0.8A
T_C = 100°C
(see Figures 1 and 2)
(see Figures 1 and 2)
† _{Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.}
TYP MAX
2
200
100
50
200
2.5
400
200
50
600
UNIT
µs
ns
ns
ns
ns
µs
ns
ns
ns
ns
PRODUCT INFORMATION
2