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TIPL791 Datasheet, PDF (1/7 Pages) Power Innovations Ltd – NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
TIPL791, TIPL791A
NPN SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
q Rugged Triple-Diffused Planar Construction
q 4 A Continuous Collector Current
q Operating Characteristics Fully Guaranteed
at 100°C
B
q 1000 Volt Blocking Capability
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-base voltage (IE = 0)
RATING
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.
TIPL791
TIPL791A
TIPL791
TIPL791A
TIPL791
TIPL791A
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
ICM
Ptot
Tj
Tstg
VALUE
850
1000
850
1000
400
450
10
4
8
75
-65 to +150
-65 to +150
UNIT
V
V
V
V
A
A
W
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1