TIP160 Datasheet, PDF (2/7 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,320-380V,125W)

TIP160, TIP161, TIP162
NPN SILICON POWER DARLINGTONS
JUNE 1973 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
I_CEO
Collector-emitter
cut-off current
I_CEX(sus)
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
V_EC
Collector-emitter
sustaining current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Parallel diode
forward voltage
V_CE = 320 V
V_CE = 350 V
V_CE = 380 V
V_CLAMP = V_(BR)CEO
I_B = 0
I_B = 0
I_B = 0
V_EB = 5 V
I_C = 0
V_CE = 2.2 V
I_B = 0.1A
I_B =
1A
I_B = 0.1A
I_C = 4 A
I_C = 6.5 A
I_C = 10 A
I_C = 6.5 A
I_E = 10 A
I_B = 0
TIP160
TIP161
TIP162
1
7
100
(see Notes 5 and 6) 200
2.8
(see Notes 5 and 6)
2.9
(see Notes 5 and 6)
2.2
(see Notes 5 and 6)
3.5
NOTES: 5. These parameters must be measured using pulse techniques, t_p = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
mA
A
mA
V
V
V
thermal characteristics
R_θJC
R_θJA
C_θC
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
Thermal capacitance of case
MIN TYP MAX UNIT
1 °C/W
41.7 °C/W
1.4
J/°C
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS ^†
t_d
Delay time
t_r
Rise time
t_s
Storage time
t_f
Fall time
I_C = 6.5 A
V_BE(off) = -5 V
I_B(on) = 100 mA
R_L = 5 Ω
I_B(off) = -100 mA
† _{Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.}
MIN TYP MAX UNIT
40
ns
1.5
µs
2.2
µs
2.6
µs
PRODUCT INFORMATION
2