TIP160 Datasheet, PDF (1/7 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,320-380V,125W)

Copyright © 1997, Power Innovations Limited, UK
TIP160, TIP161, TIP162
NPN SILICON POWER DARLINGTONS
JUNE 1973 - REVISED MARCH 1997
q 50 W at 25°C Case Temperature
q 10 A Continuous Collector Current
q 15 A Peak Collector Current
q Maximum V_CE(sat) of 2.8 V at I_C = 6.5 A
q I_CEX(sus) 7 A at rated V_(BR)CEO
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I_E = 0)
Collector-emitter voltage (I_B = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Peak commutating anti-parallel diode current (I_B = 0) (see Note 2)
Continuous base current
Continuous device dissipation at (or below) 100°C case temperature (see Note 3)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
TIP160
TIP161
TIP162
TIP160
TIP161
TIP162
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_EM
I_B
P_tot
P_tot
T_j
T_stg
T_L
320
350
V
380
320
350
V
380
5
V
10
A
15
A
10
A
1
A
50
W
3
W
-65 to +150
°C
-65 to +150
°C
260
°C
NOTES: 1. This value applies for t_p ≤ 10 ms, duty cycle ≤ 10%.
2. This value applies to the total collector-terminal current when the collector is at negative potential with respect to the emitter.
3. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
4. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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