TICP107 Datasheet, PDF (2/6 Pages) Power Innovations Ltd – SILICON CONTROLLED RECTIFIERS

TICP107 SERIES
SILICON CONTROLLED RECTIFIERS
JANUARY 1999 - REVISED JUNE 2000
electrical characteristics at 25°C ambient temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
I_DRM
Repetitive peak
off-state current
V_D = rated V_DRM
R_GK = 1 kΩ
20
µA
I_RRM
Repetitive peak
reverse current
V_R = rated V_RRM
I_G = 0
200
µA
I_GT Gate trigger current
V_GT Gate trigger voltage
I_H Holding current
V_T On-state voltage
V_AA = 12 V
V_AA = 12 V
V_AA = 12 V
I_T = 2 A
R_L = 100 Ω
R_L = 100 Ω
(see Note 5)
t_p(g) ≥ 20 µs
50
t_p(g) ≥ 20 µs
0.4
Initiating I_T = 10 mA
200
µA
1
V
2
mA
1.4
V
NOTE 5: This parameter must be measured using pulse techniques, t_p = 1 ms, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
PRODUCT INFORMATION
2