TICP107 Datasheet, PDF (1/6 Pages) Power Innovations Ltd – SILICON CONTROLLED RECTIFIERS

Copyright © 2000, Power Innovations Limited, UK
TICP107 SERIES
SILICON CONTROLLED RECTIFIERS
JANUARY 1999 - REVISED JUNE 2000
G 1 A Continuous On-State Current
G 15 A Surge-Current
G Glass Passivated Wafer
G 400 V to 600 V Off-State Voltage
G I_GT 50 µA min, 200 µA max
G di/dt 100A/µs
G Package Options
PACKAGE
LP
LP with fomed leads
PACKING
Bulk
Tape and Reel
PART # SUFFIX
(None)
R
LP PACKAGE
(TOP VIEW)
G
1
A
2
K
3
LP PACKAGE
WITH FORMED LEADS
(TOP VIEW)
G
1
A
2
3
K
MDC1AA
MDC1AB
absolute maximum ratings over operating junction temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (see Note 1)
Repetitive peak reverse voltage
Continuous on-state current at (or below) 25°C ambient temperature (see Note 2)
Surge on-state current at (or below) 25°C ambient temperature (see Note 3)
Critical rate of rise of on-state current at 110°C (see Note 4)
Peak positive gate current (pulse width ≤ 300 µs)
Junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
TICP107D
TICP107M
TICP107D
TICP107M
V_DRM
V_RRM
I_T(RMS)
I_TSM
di/dt
I_GM
T_J
T_stg
T_L
400
600
400
600
1
15
100
0.2
-40 to +110
-40 to +125
230
V
V
A
A
A/µs
A
°C
°C
°C
NOTES: 1. These values apply when the gate-cathode resistance R_GK = 1 kΩ.
2. These values apply for continuous dc operation with resistive load.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. Rate of rise of on-state current after triggering with I_G = 10mA, di_G/dt = 1A/µs.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1