TICP106 Datasheet, PDF (2/6 Pages) Power Innovations Ltd – SILICON CONTROLLED RECTIFIERS

TICP106 SERIES
SILICON CONTROLLED RECTIFIERS
MARCH 1988 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
I_DRM
I_RRM
I_GT
V_GT
I_H
V_TM
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
Gate trigger voltage
Holding current
Peak on-state
voltage
V_D = rated V_DRM
V_R = rated V_RRM
V_AA = 6 V
V_AA = 6 V
V_AA = 6 V
I_TM = 1 A
R_GK = 1 kΩ
I_G = 0
R_L = 100 Ω
R_L = 100 Ω
R_GK = 1 kΩ
R_GK = 1 kΩ
(see Note 5)
20
µA
200
µA
t_p(g) ≥ 20 µs
60 200
µA
t_p(g) ≥ 20 µs
0.4
1
V
Initiating I_T = 10 mA
5
mA
1.5
V
NOTE 5: This parameter must be measured using pulse techniques, t_p = 1 ms, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
PRODUCT INFORMATION
2