TICP106 Datasheet, PDF (1/6 Pages) Power Innovations Ltd – SILICON CONTROLLED RECTIFIERS

Copyright © 1997, Power Innovations Limited, UK
TICP106 SERIES
SILICON CONTROLLED RECTIFIERS
MARCH 1988 - REVISED MARCH 1997
q 2 A Continuous On-State Current
q 15 A Surge-Current
q Glass Passivated Wafer
q 400 V to 600 V Off-State Voltage
q Max I_GT of 200 µA
q Package Options
PACKAGE
LP
LP with fomed leads
PACKING
Bulk
Tape and Reel
PART # SUFFIX
(None)
R
LP PACKAGE
(TOP VIEW)
G
1
A
2
3
K
LP PACKAGE
WITH FORMED LEADS
(TOP VIEW)
G
1
A
2
3
K
MDC1AA
MDC1AB
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (see Note 1)
Repetitive peak reverse voltage
Continuous on-state current at (or below) 85°C case temperature (see Note 2)
Surge on-state current (see Note 3)
Peak positive gate current (pulse width ≤ 300 µs)
Average gate power dissipation (see Note 4)
Operating case temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
TICP106D
TICP106M
TICP106D
TICP106M
V_DRM
V_RRM
I_T(RMS)
I_TSM
I_GM
P_G(AV)
T_C
T_stg
T_L
400
V
600
400
V
600
2
A
15
A
0.2
A
0.3
W
-40 to +110
°C
-40 to +125
°C
230
°C
NOTES: 1. These values apply when the gate-cathode resistance R_GK = 1 kΩ.
2. These values apply for continuous dc operation with resistive load. Above 85°C derate linearly to zero at 110°C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. This value applies for a maximum averaging time of 20 ms.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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