 English |
|
|
|
|
|
|
|
| PSMN4R3-80ES Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK | |||
| |||
| ◁ |
NXP Semiconductors
PSMN4R3-80ES
N-channel 80 V, 4.3 m⦠standard level MOSFET in I2PAK
18
RDSon
(mΩ)
12
003aaf628
4.4
VGS(V) = 4.5
6
6.0
20.0
0
0
20
40
60 ID(A) 80
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions
of drain current; typical values
10
VGS
(V)
7.5
5
64V
40V
VDS= 16V
003aaf625
105
C
(pF)
104
003aaf626
Ciss
2.5
0
0
30
60
90 QG (nC)120
103
102
10-1
1
Coss
Crss
10 VDS(V) 102
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN4R3-80ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 18 April 2011
© NXP B.V. 2011. All rights reserved.
9 of 15
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese