PSMN4R3-80ES Datasheet, PDF (3/15 Pages) NXP Semiconductors – N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK

NXP Semiconductors
PSMN4R3-80ES
N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
T_sld(M)
peak soldering temperature
Source-drain diode
T_j ≥ 25 °C; T_j ≤ 175 °C
T_j ≥ 25 °C; T_j ≤ 175 °C; R_GS = 20 kΩ
V_GS = 10 V; T_mb = 100 °C; see Figure 1
V_GS = 10 V; T_mb = 25 °C; see Figure 1
pulsed; t_p ≤ 10 µs; T_mb = 25 °C; see Figure 3
T_mb = 25 °C; see Figure 2
I_S
source current
I_SM
peak source current
Avalanche ruggedness
T_mb = 25 °C
pulsed; t_p ≤ 10 µs; T_mb = 25 °C
E_DS(AL)S
non-repetitive drain-source
avalanche energy
V_GS = 10 V; T_j(init) = 25 °C; I_D = 120 A;
V_sup ≤ 80 V; R_GS = 50 Ω; unclamped
Min
-
-
-20
[1] _-
[1] _-
-
-
-55
-55
-
[1] _-
-
-
[1] Continuous current is limited by package.
Max Unit
80 V
80 V
20 V
120 A
120 A
688 A
306 W
175 °C
175 °C
260 °C
120 A
688 A
676 mJ
200
ID
(A)
160
120
(1)
80
40
003aaf630
120
P_der
(%)
80
40
03aa16
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN4R3-80ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 18 April 2011
© NXP B.V. 2011. All rights reserved.
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