PMV160UP_15 Datasheet, PDF (9/16 Pages) NXP Semiconductors – 20 V, 1.2 A P-channel Trench MOSFET

NXP Semiconductors
PMV160UP
20 V, 1.2 A P-channel Trench MOSFET
–5
V_GS
(V)
–4
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–3
–2
–1
0
0
1
2
3
4
Q_G (nC)
I_D = -1.0 A; V_DS = -10 V; T_amb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
–2.0
I_S
(A)
–1.5
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
017aaa137
Fig 15. Gate charge waveform definitions
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–1.0
–0.5
(1)
(2)
0.0
0.0
–0.4
–0.8
–1.2
V_SD (V)
V_GS = 0 V
(1) T_j = 150 °C
(2) T_j = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
PMV160UP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 6 December 2011
© NXP B.V. 2011. All rights reserved.
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