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| PMV160UP_15 Datasheet, PDF (1/16 Pages) NXP Semiconductors – 20 V, 1.2 A P-channel Trench MOSFET | |||
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PMV160UP
20 V, 1.2 A P-channel Trench MOSFET
Rev. 2 â 6 December 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
ï® 1.8 V RDSon rated
ï® Very fast switching
ï® Trench MOSFET technology
1.3 Applications
ï® Relay driver
ï® High-speed line driver
ï® High-side loadswitch
ï® Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
Static characteristics
Tj = 25 °C
VGS = -4.5 V; Tamb 25 °C
-
-
-8
-
[1]
-
-
-20 V
8
V
-1.2 A
RDSon
drain-source on-state VGS = -4.5 V; ID = -1.2 A; Tj = 25 °C
resistance
-
170 210 mâ¦
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G
gate
S
source
D
drain
Simplified outline
3
1
2
SOT23 (TO-236AB)
Graphic symbol
D
G
S
017aaa257
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