BUK7E04-40A_15 Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7E04-40A
N-channel TrenchMOS standard level FET
10
V_GS
(V)
8
6
4
2
0
0
03ne61
V_DD = 14 V
V_DD = 32 V
30
60
90
120
Q_G (nC)
8
C
(nF)
6
4
2
0
10^−1
1
03ne67
C_iss
C_oss
C_rss
10
10²
V_DS (V)
Fig 13. Gate-source voltage as a function of turn-on
gate charge; typical values
200
I_S
(A)
150
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
03ne60
100
50
T_j = 175 °C
0
0
0.5
T_j = 25 °C
1.0
1.5
V_SD (V)
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
BUK7E04-40A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 15 June 2010
© NXP B.V. 2010. All rights reserved.
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