BUK7E04-40A_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK7E04-40A
N-channel TrenchMOS standard level FET
Rev. 03 — 15 June 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Suitable for standard level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V loads
„ Automotive and general purpose
power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V_DS
I_D
Quick reference data
Parameter
drain-source voltage
drain current
P_tot
total power dissipation
Static characteristics
R_DSon
drain-source on-state
resistance
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
V_GS = 10 V; T_mb = 25 °C;
see Figure 3; see Figure 1
T_mb = 25 °C; see Figure 2
V_GS = 10 V; I_D = 25 A;
T_j = 175 °C; see Figure 11;
see Figure 12
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 11;
see Figure 12
Min Typ Max Unit
-
-
40 V
[1] _-
-
75 A
-
-
300 W
-
-
8.5 mΩ
-
3.9 4.5 mΩ