BUK7511-55B_15 Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7511-55B
N-channel TrenchMOS standard level FET
10
V_GS
(V)
8
6
4
2
0
0
03nn37
V_DD = 14 V
V_DD = 44 V
10
20
30
40
Q_G (nC)
3000
C
(pF)
2000
1000
0
10^−2
10^−1
C _iss
03nn43
C_oss
C _rss
1
10
10²
V_DS (V)
Fig 13. Gate-source voltage as a function of gate
charge; typical values
100
I_S
(A)
75
T_j = 175 °C
T_j = 25 °C
50
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
03nn36
25
0
0.0
0.5
1.0 _{VSD (V)} 1.5
Fig 15. Source current as a function of source-drain voltage; typical values
BUK7511-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 31 January 2011
© NXP B.V. 2011. All rights reserved.
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