BUK7511-55B_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7511-55B
N-channel TrenchMOS standard level FET
100
I_D
(A)
75
03nn46
Capped at 75 A due to package
50
25
0
0
50
100
150
200
T_mb (°C)
120
P_der
(%)
80
03na19
40
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
10³
I_D
(A)
10²
Limit R_DSon = V_DS/I_D
Capped at 75 A due to package
10
1
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
03nn44
DC
10
t_p = 10 μ s
100 μ s
1 ms
10 ms
100 ms
10²
V_DS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
BUK7511-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 31 January 2011
© NXP B.V. 2011. All rights reserved.
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