BUK7506-75B Datasheet, PDF (9/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK75/7606-75B
TrenchMOS™ standard level FET
100
ID
(A)
80
60
40
03ng96
10
VGS
(V)
8
6
4
VDD = 14 V
03ng94
VDD = 60 V
20
0
0
Tj = 175 ºC
Tj = 25 ºC
2
4
6
VGS (V)
2
0
0
20
40
60
80
100
QG (nC)
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
100
IS
(A)
80
03ng93
60
40
20
0
0.0
Tj = 175 ºC
0.2
0.4
0.6
Tj = 25 ºC
0.8
1.0
VSD (V)
V_GS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 10278
Product data
Rev. 02 — 20 September 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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