BUK7506-75B Datasheet, PDF (7/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK75/7606-75B
TrenchMOS™ standard level FET
400
ID
(A)
300
20
10
8
7
6.5
03ng98
8
RDSon
(mΩ)
7
03ng97
200
6
5.5
100
5
VGS = 4.5 V
0
0
2
4
6
8
10
VDS (V)
4
5
10
15
20
VGS (V)
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
14
RDSon ^{VGS = 4.5 V}
(mΩ)
12
5
10
03ng99
2.4
a
1.6
03nb25
8
5.5
0.8
6
8
6.5
6
10
4
0
50
100
150
200
ID (A)
0
-60
0
60
120 _{Tj (°C)} 180
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = -_R---_D----^R_S---_oD---_n-^S-₍--^o2--₅-ⁿ--_°--_C---₎
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 10278
Product data
Rev. 02 — 20 September 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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