BUK7215-55A_15 Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7215-55A
N-channel TrenchMOS standard level FET
10
V_GS
(V)
8
6
4
2
0
0
V_DD = 14 V
03na33
V_DD = 44 V
20
40
60
Q_G (nC)
3000
C
(pF)
2500
2000
1500
1000
500
0
10^−2
10^−1
03na38
C_iss
C_oss
C_rss
1
10
10²
V_DS (V)
Fig 13. Gate-source voltage as a function of turn-on
gate charge; typical values
100
I_S
(A)
80
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
03na32
60
40
20
0
0.0
T_j = 175 °C
0.5
T_j = 25 °C
1.0
1.5
V_SD (V)
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
BUK7215-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 27 January 2011
© NXP B.V. 2011. All rights reserved.
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