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BUK7215-55A_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
NXP Semiconductors
BUK7215-55A
N-channel TrenchMOS standard level FET
250
ID
(A)
200
150
100
50
0
0
VGS (V) = 20
03na36
10
9
8
7
6
5
2
4
6
8
10
VDS (V)
16
RDSon
(mΩ)
14
03nf80
12
10
8
12
16
20
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10−1
ID
(A)
10−2
10−3
03aa35
min typ max
30
gfs
(S)
20
03na35
10−4
10
10−5
10−6
0
2
4
6
VGS (V)
0
0
20
40
60
80
100
ID (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK7215-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 27 January 2011
© NXP B.V. 2011. All rights reserved.
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