BUK7213-40A Datasheet, PDF (9/14 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7213-40A
TrenchMOS™ standard level FET
100
ID
(A)
75
03nk25
10
VGS
(V)
8
VDD = 14 V
03np37
6
VDD = 32 V
50
4
25
0
0
Tj = 175 °C
Tj = 25 °C
2
4
6
8
VGS (V)
2
0
0
10
20
30
40
50
QG (nC)
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
100
IS
(A)
75
03nk22
50
25
Tj = 175 °C
Tj = 25 °C
0
0.0
0.5
1.0
1.5
VSD (V)
V_GS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 12486
Product data
Rev. 01 — 29 January 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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