BUK7213-40A Datasheet, PDF (5/14 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7213-40A
TrenchMOS™ standard level FET
6. Characteristics
Table 5: Characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Static characteristics
V_(BR)DSS drain-source breakdown
I_D = 0.25 mA; V_GS = 0 V
voltage
T_j = 25 °C
40
T_j = −55 °C
36
V_GS(th)
gate-source threshold voltage I_D = 1 mA; V_DS = V_GS; Figure 9
T_j = 25 °C
2
T_j = 175 °C
1
T_j = −55 °C
-
I_DSS
drain-source leakage current V_DS = 40 V; V_GS = 0 V
T_j = 25 °C
-
T_j = 175 °C
-
I_GSS
gate-source leakage current V_GS = ±20 V; V_DS = 0 V
-
R_DSon
drain-source on-state
resistance
V_GS = 10 V; I_D = 25 A;
Figure 7 and 8
T_j = 25 °C
-
T_j = 175 °C
-
Dynamic characteristics
Q_g(tot)
Q_gs
Q_gd
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
L_d
total gate charge
V_GS = 10 V; V_DD = 32 V;
-
gate-to-source charge
I_D = 25 A; Figure 14
-
gate-to-drain (Miller) charge
-
input capacitance
V_GS = 0 V; V_DS = 25 V;
-
output capacitance
f = 1 MHz; Figure 12
-
reverse transfer capacitance
-
turn-on delay time
rise time
V_DD = 30 V; R_L = 1.2 Ω;
-
V_GS = 10 V; R_G = 10 Ω
-
turn-off delay time
-
fall time
-
internal drain inductance
measured from drain to centre
-
of die
L_s
internal source inductance measured from source lead to
-
source bond pad
Typ
Max
Unit
-
-
V
-
-
V
3
4
V
-
-
V
-
4.4
V
0.05
10
µA
-
500
µA
2
100
nA
10.3
13
mΩ
-
24.7
mΩ
47
-
nC
10
-
nC
20
-
nC
1 684
2 245
pF
590
708
pF
389
532
pF
16
-
ns
124
-
ns
57
-
ns
68
-
ns
2.5
-
nH
7.5
-
nH
9397 750 12486
Product data
Rev. 01 — 29 January 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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