BUK7105-40ATE_15 Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

NXP Semiconductors
BUK7105-40ATE
N-channel TrenchPLUS standard level FET
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
max
typ
min
03aa32
60
120
180
T_j (°C)
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
Fig 9. Gate-source threshold voltage as a function of Fig 10. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
90
03ni89
8
gfs
(S)
C
(nF)
6
60
03ne67
4
C_iss
30
0
0
25
50
75
100
ID (A)
2
0
10^−1
1
C_oss
C_rss
10
10²
V_DS (V)
Fig 11. Forward transconductance as a function of
drain current; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK7105-40ATE_2
Product data sheet
Rev. 02 — 10 February 2009
© NXP B.V. 2009. All rights reserved.
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