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| BUK7105-40ATE_15 Datasheet, PDF (3/15 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET | |||
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NXP Semiconductors
BUK7105-40ATE
N-channel TrenchPLUS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
-
VGS
gate-source voltage
-20
ID
drain current
Tmb = 25 °C; VGS = 10 V; see Figure 2; see Figure 3 [1] -
[2] -
Tmb = 100 °C; VGS = 10 V; see Figure 2
IDM
peak drain current
Tmb = 25 °C; tp ⤠10 µs; pulsed; see Figure 3
Ptot
total power dissipation Tmb = 25 °C; see Figure 1
IGS(CL)
gate-source clamping continuous
current
pulsed; tp = 5 ms; δ = 0.01
Visol(FET-TSD) FET to temperature
sense diode isolation
voltage
[2] -
-
-
-
-
-100
Tstg
storage temperature
-55
Tj
junction temperature
-55
Source-drain diode
IS
source current
Tmb = 25 °C
[1] -
[2] -
ISM
peak source current tp ⤠10 µs; pulsed; Tmb = 25 °C
-
Avalanche ruggedness
EDS(AL)S
non-repetitive
ID = 75 A; Vsup ⤠40 V; RGS = 50 â¦; VGS = 10 V;
-
drain-source
Tj(init) = 25 °C; unclamped
avalanche energy
Electrostatic discharge
Vesd
electrostatic
HBM; C = 100 pF; R = 1.5 kâ¦
-
discharge voltage
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Max
40
20
155
75
75
620
272
10
50
100
175
175
155
75
620
1.46
6
Unit
V
V
A
A
A
A
W
mA
mA
V
°C
°C
A
A
A
J
kV
BUK7105-40ATE_2
Product data sheet
Rev. 02 â 10 February 2009
© NXP B.V. 2009. All rights reserved.
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