BUK7105-40AIE Datasheet, PDF (9/16 Pages) NXP Semiconductors – TrenchPLUS standard level FET

Philips Semiconductors
BUK71/7905-40AIE
TrenchPLUS standard level FET
100
03ni90
10
VGS
ID
(V)
03ni26
(A)
8
75
VDS = 14 V
32 V
6
50
4
175 °C
25
Tj = 25 °C
2
0
0
2
4 _{VGS (V)} 6
0
0
20
40
60
80
100 120
QG (nC)
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
600
ID/Isense
550
03nn69
4
RD(Is)on
(Ω)
3
03nk33
500
2
450
1
400
4
8
12
16 _{VGS (V)} 20
I_D = 50 A
Fig 15. Drain-sense current ratio as a function of
gate-source voltage; typical values.
0
4
6
8 _{VGS (V)} 10
I_sense = 25 mA
Fig 16. Drain-I_sense on-state resistance as a function of
gate-source voltage; typical values.
9397 750 12341
Product data
Rev. 04 — 6 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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