English
Language : 

BUK7105-40AIE Datasheet, PDF (2/16 Pages) NXP Semiconductors – TrenchPLUS standard level FET
Philips Semiconductors
BUK71/7905-40AIE
TrenchPLUS standard level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
Version
BUK7105-40AIE D2-PAK
Plastic single-ended surface mounted package (Philips version of D2-PAK); SOT426
5 leads (one lead cropped)
BUK7905-40AIE TO-220
Plastic single ended package; heatsink mounted; 1 mounting hole; 5-lead SOT263B
TO-220
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 kΩ
Tmb = 25 °C; VGS = 10 V;
Figure 2 and 3
-
-
-
[1] -
[2] -
IDM
peak drain current
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
[2] -
-
Ptot
total power dissipation
Tmb = 25 °C; Figure 1
-
IGS(CL)
gate-source clamping current
continuous
-
tp = 5 ms; δ = 0.01
-
Tstg
storage temperature
−55
Tj
junction temperature
−55
Source-drain diode
IDR
reverse drain current (DC)
Tmb = 25 °C
[1] -
[2] -
IDRM
peak reverse drain current
Avalanche ruggedness
Tmb = 25 °C; pulsed; tp ≤ 10 µs
-
EDS(AL)S
non-repetitive drain-source
avalanche energy
Electrostatic discharge
unclamped inductive load; ID = 75 A;
-
VDS ≤ 40 V; VGS = 10 V;
RGS = 50 Ω; starting Tj = 25 °C
Vesd
electrostatic discharge voltage; all Human Body Model; C = 100 pF;
-
pins
R = 1.5 kΩ
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Max Unit
40
V
40
V
±20
V
155
A
75
A
75
A
620
A
272
W
10
mA
50
mA
+175 °C
+175 °C
155
A
75
A
620
A
1.46 J
6
kV
9397 750 12341
Product data
Rev. 04 — 6 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
2 of 16