BUK664R8-75C_15 Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchMOS FET

NXP Semiconductors
BUK664R8-75C
N-channel TrenchMOS FET
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
10
V_GS
(V)
8
6
4
2
0
0
003aae434
14 V
V_DS = 60 V
50
100
150 _{QG (nC)} 200
Fig 13. Gate charge waveform definitions
10⁵
C
(pF)
10⁴
003aae431
C_iss
10³
10²
10^-2
10^-1
1
C_oss
C_rss
10 _{VDS (V)} 10²
Fig 14. Gate-source voltage as a function of gate
charge; typical values
160
I_S
(A)
120
003aae435
80
40
0
0
T_j = 175 °C
T_j = 25 °C
0.3
0.6
0.9
1.2
V_SD (V)
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 16. Source current as a function of source-drain
voltage; typical values
BUK664R8-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 17 November 2010
© NXP B.V. 2010. All rights reserved.
9 of 14