 English |
|
|
|
|
|
|
|
| BUK664R8-75C_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS FET | |||
| |||
| ◁ |
NXP Semiconductors
160
ID
(A)
120
(1)
80
003aac794
40
0
0
50
100
150
200
Tmb (°C)
BUK664R8-75C
N-channel TrenchMOS FET
120
Pder
(%)
80
03aa16
40
0
0
50
100
150
200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
104
ID
(A)
103
102
Limit RDSon = VDS / ID
10
1
10-1
10-1
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aae426
DC
10
tp =10 μ s
100 μ s
1 ms
10 ms
100 ms
102
V DS (V)
103
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK664R8-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 â 17 November 2010
© NXP B.V. 2010. All rights reserved.
4 of 14
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese