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| BUK661R8-30C_15 Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET | |||
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NXP Semiconductors
BUK661R8-30C
N-channel TrenchMOS intermediate level FET
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
10
VGS
(V)
8
6
4
2
0
0
003aae298
14V
24V
50
100
150
200
QG (nC)
Fig 13. Gate charge waveform definitions
105
C
(pF)
104
003aae296
Ciss
103
Coss
Crss
102
10-1
1
10
102
VDS(V)
Fig 14. Gate-source voltage as a function of gate
charge; typical values
100
IS
(A)
80
003aae300
60
40
Tj = 175 °C
Tj = 25 °C
20
0
0
0.3
0.6
0.9
1.2
VSD(V)
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 16. Source current as a function of source-drain
voltage; typical values
BUK661R8-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2.1 â 18 August 2011
© NXP B.V. 2011. All rights reserved.
9 of 14
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