BUK661R8-30C_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
300
I_D
(A)
250
200
150
100
50
0
0
003aae366
(1)
50
100
150 _{Tmb(°C)200}
BUK661R8-30C
N-channel TrenchMOS intermediate level FET
120
P_der
(%)
80
03na19
40
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
10⁴
I_D
(A)
10³
Limit R_DSon = V_DS/ I_D
10²
10
1
10^-1
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aae367
DC
10
t_p =10 μ s
100 μ s
10 ms
100 ms
10²
V _DS(V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK661R8-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2.1 — 18 August 2011
© NXP B.V. 2011. All rights reserved.
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