BUK625R2-30C_15 Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK625R2-30C
N-channel TrenchMOS intermediate level FET
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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10
V_GS
(V)
8
6
4
2
0
0
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V_DS= 14V
24V
20
40
60
Q_G (nC)
Fig 13. Gate charge waveform definitions
10⁴
C
(pF)
10³
10²
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C_iss
C_oss
C_rss
10
10^-1
1
10
10²
V_DS (V)
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values
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100
I_S
(A)
80
60
40
20
0
0
T_j = 175 °C
0.3
0.6
T_j = 25 °C
0.9
1.2
V_SD (V)
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 16. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
BUK625R2-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 July 2011
© NXP B.V. 2011. All rights reserved.
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