BUK625R2-30C_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK625R2-30C
N-channel TrenchMOS intermediate level FET
Table 6. Characteristics …continued
Symbol
Parameter
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
Conditions
I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 16
I_S = 20 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 25 V
Min Typ Max Unit
-
0.8 1.2 V
-
45
-
ns
-
61
-
nC
100
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g_fs
(S)
80
60
40
20
0
0
20
40
60
80
100
I_D (A)
160
I_D
V_GS(V) = 10 8.0 6.0
(A)
120
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5.0
4.5
4.2
80
4.0
3.8
40
3.6
3.4
3.2
0
0
0.5
1
1.5 _VDS(V) 2
Fig 5. Forward transconductance as a function of
drain current; typical values
20
R_DSon
(mΩ)
16
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12
8
4
0
0
4
8
12
16
V_GS (V)
Fig 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
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80
I_D
(A)
60
40
20
0
0
T_j = 175 °C
T_j = 25 °C
1
2
3
4 _VGS(V) 5
Fig 7. Drain-source on-state resistance as a function Fig 8. Transfer characteristics: drain current as a
of gate-source voltage; typical values
function of gate-source voltage; typical values
BUK625R2-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 July 2011
© NXP B.V. 2011. All rights reserved.
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