BUK6218-40C_15 Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK6218-40C
N-channel TrenchMOS intermediate level FET
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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10
V_GS
(V)
8
6
V_DS = 14V
4
2
0
0
10
003aae851
32V
20 _{QG (nC)} 30
Fig 13. Gate charge waveform definitions
10⁴
C
(pF)
10³
10²
10
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C_iss
C_oss
C_rss
1
0.01
0.1
1
10 _VDS(V) 100
Fig 14. Gate-source voltage as a function of gate
charge; typical values
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50
I_S
(A)
40
30
20
T_j = 175 °C
T_j = 25 °C
10
0
0
0.3
0.6
0.9 _VSD(V) 1.2
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 16. Source current as a function of source-drain
voltage; typical values
BUK6218-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
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