BUK6218-40C_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

BUK6218-40C
N-channel TrenchMOS intermediate level FET
Rev. 1 — 4 October 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using TrenchMOS technology. This product has been designed and
qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Suitable for standard and logic level
gate drive sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V Automotive systems
„ Electric and electro-hydraulic power
steering
„ Motors, lamps and solenoids
„ Start-Stop micro-hybrid applications
„ Transmission control
„ Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source
T_j ≥ 25 °C; T_j ≤ 175 °C
voltage
I_D
drain current
V_GS = 10 V; T_mb = 25 °C;
see Figure 1
P_tot
total power
see Figure 2
dissipation
Static characteristics
R_DSon
drain-source
on-state
resistance
V_GS = 10 V; I_D = 10 A;
T_mb = 25 °C; see Figure 11
Min Typ Max Unit
-
-
40 V
-
-
42 A
-
-
60 W
-
13.5 16 mΩ