 English |
|
|
|
|
|
|
|
| BUK6211-75C_15 Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel TrenchMOS FET | |||
| |||
| ◁ |
NXP Semiconductors
BUK6211-75C
N-channel TrenchMOS FET
10
VGS
(V)
8
6
4
003aae414
14V
VDS= 60V
2
0
0
20
40
60
80
100
QG (nC)
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 13. Gate-source voltage as a function of gate
charge; typical values
200
IS
(A)
150
Fig 14. Gate charge waveform definitions
003aae416
100
Tj = 175 °C
Tj = 25 °C
50
0
0
0.5
1
1.5 VSD(V) 2
Fig 15. Source current as a function of source-drain voltage; typical values
BUK6211-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 28 September 2010
© NXP B.V. 2010. All rights reserved.
9 of 15
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese