BUK6211-75C_15 Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel TrenchMOS FET

NXP Semiconductors
BUK6211-75C
N-channel TrenchMOS FET
4
V_GS(th)
(V)
3
2
1
max
typ
min
003aad805
0
-60
0
60
120
180
T_j (°C)
10^-1
I_D
(A)
10^-2
10^-3
10^-4
10^-5
10^-6
0
003aad806
min typ max
1
2
3
4
V_GS (V)
Fig 9. Gate-source threshold voltage as a function of Fig 10. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
40
003aae887
3
3.2 3.4 3.6
3.8
4
R_DSon
a
(mΩ)
2.5
30
2
003aad804
20
1.5
4.5
1
10
V_GS (V) = 5, 6, 10
0.5
0
0
25
50
75
T_j = 25°C; t_p = 300 µs
100
125
I_D (A)
0
-60
0
60
120
180
T_j (°C)
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
BUK6211-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 28 September 2010
© NXP B.V. 2010. All rights reserved.
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